Modelisation, Simulation and Theory Group
Publications
2006
Ab initio study of biphenyl chemisorption on Si(001): Configurational stability
M. Mamatkulov, L. Stauffer, Ph. Sonnet, C. Minot
Phys. Rev. B 73 (2006) 035321
2005
Carbon induced Ge dots on Si(001): interplay of stain and chemical effects
G. Hadjisavvas, Ph. Sonnet, and P. C. Kelires,
``Quantum Dots: Fundamentals, Applications, and Frontiers'', NATO Science ARW Series, Vol. 190 (Springer 2005), edited by B. Joyce et al., p. 209.
Molecular precursor-mediated dissociation on Si(111)7x7: ab-initio study
Ph. Sonnet, L. Stauffer, M. Habar, C. Minot
Surface Science 577 (2005) 15-21
General trends of the carbon penetration in Si(001) surfaces
E.M. Tammar, Ph. Sonnet, L. Stauffer , P.C. Kelires
Solid State Communications 135 (2005) 138-143.
2004
Improving carbon penetration in Si(001) surfaces by acting on the surface Si-defects
Ph. Sonnet, A. Selloni, L. Stauffer
Surface Science 566/568 (2004) 916-920
Influence of germanium ad-dimers on carbon incorporation in the Si(001) surface
Ph. Sonnet, L. Stauffer , P.C. Kelires
Phys. Rev. B 70 (2004) 235303.
Physical origin of trench formation in Ge/Si(100) islands
Ph. Sonnet and P.C. Kelires
Applied Physics Letters 85 (2004) 203-205
2003
Influence of ad-dimers on the incorporation of carbon in the Si(001) surface
Ph. Sonnet, L. Stauffer , A. Selloni, A. DeVita
Phys. Rev. B 67 (2003) 233305 (Brief Reports)
Stress and composition of C-induced Ge dots on Si(100)
G. Hadjisavvas, Ph. Sonnet, P. Kelires
Phys. Rev. B 67 (2003) 241302 (Rapid Communications)
Defect-mediated carbon incorporation in the Si(001) surface : role of stress and carbon-defect interactions
Ph. Sonnet, L. Stauffer , A. Selloni, P.C. Kelires
Surface Science 544 (2003) 277-284
2002
Energetics of substitutional carbon in hydrogenated Si(001)
Ph. Sonnet, A. Selloni, L. Stauffer, A. DeVita, R. Car
Phys. Rev. B 65 (2002) 85322
Monte Carlo studies of stress fields and intermixing in Ge/Si(001) quantum dots
Ph. Sonnet, P. Kelires
Phys. Rev. B 66 (2002) 205307
Comparison of carbon incorporation on the clean and hydrogenated Si(001) reconstructed surface
Ph. Sonnet and L. Stauffer
Surface Science 507/510 (2002) 87.