2006

Surface energy minimization struggle between Ge and Si on 4H-SiC(0001)-(3x3)

D. Dentel, K. Ait-Mansour, M. Derivaz, L. Kubler, M. Diani, D. Bolmont and J.L. Bischoff.

Journal de Physique IV 132, 17

2005

Epitaxy relationships between Ge islands and SiC(0001)

K. Ait-Mansour, D. Dentel, L. Kubler, M. Diani, J.L. Bischoff and D. Bolmont

Appl. Surf. Sci. 241, 403

Ge epitaxial island growth on a graphitised C-rich 4H-SiC(0001) surface

K. Ait-Mansour, D. Dentel, L. Kubler, M. Diani, J.L. Bischoff and A. Galliano

Journal of Crystal growth 275, e2275

Bidimensional intercalation of Ge between SiC(0001)and a heteroepitaxial graphite top layer

L. Kubler, K. Ait-Mansour, M. Diani, D. Dentel, J.L. Bischoff and M. Derivaz.

Phys Rev B 72, 115319

2004

A structural parallel between Ge and Si induced 4x4 and 3x3 reconstructions on SiC(0001) drawn for comparative RHEDD oscillations

K. Ait-Mansour, L. Kubler, M. Diani, D. Dentel, J.L. Bischoff, L. Simon, J.C. Peruchetti and A. Galliano

Surf. Sci. 565, 57

Ge quantum dots on a large band gap semiconductor : the first growth stages on 4H-SiC (0001)

K. Ait-Mansour, D. Dentel, J.L. Bischoff, L. Kubler, M. Diani, A. Barski, M. Derivaz, P. Noé

Physica E. 23, 428

Strain induced morphology manipulations of Si and Ge based heterostructures on Si(001) surfaces

D. Dentel, K. Ait-Mansour, J.L. Bischoff, L. Kubler and D. Bolmont

Appl. Surf. Sci. 235, 103

Surface morphology evolution during Si capping of Ge islands grown on Si(001)-c(4x4)

K. Ait-Mansour, D. Dentel, J.L. Bischoff and L. Kubler

Journal of Applied Physics 95, 5447